首页 | 加入收藏夹
型号:  
 
免费检索超过百万PDF Datasheet!  
 
型号 FDC606P 
厂家: FAIRCHILD SEMICONDUCTOR
描述: MOSFET P-CH 12V 6A SSOT-6
 下载PDF Datasheet文档
详细技术参数
VendorFairchild Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameSuperSOT?-6
FET TypeP-Channel
Drain to Source Voltage (Vdss)12.0 V [Nom]
Voltage Gate to Source (Vgs)8.0 V [Max]
Continuous Drain Current (Id)6.00 A [Nom]
Input Capacitance (Ciss)1699.0 pF @ 6.0 V
Gate Charge (Qg)18.00 nC @ 4.5 V
Power Dissipation1.600 W [Max]
PackagingTape & Reel, 7"
Protection Diode(s)Drain to Source
Delay Time On11.00 ns [Typ]
Delay Time Off89.00 ns [Typ]
Rise Time10.00 ns [Typ]
Fall Time70.000 ns [Typ]
Vgs Min.400.00 mV @ 250.0 ?A
Vgs Max.1.00 mV @ 250.0 ?A
Drain Peak Current (Idm)20.00 A [Nom]
Operating Junction Temperature-55 °C [Min]
Operating Junction Temperature150 °C [Max]
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
 
FDC606P 供应商 FDC606P Datasheet FDC606P 技术参数 FDC606P 替代型号
FDC606P 代理商 FDC606P 现货 FDC606P 电路图 FDC606P 规格书
  型号:
关于我们   网站合作  友情链接  Adobe Reader 下载