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型号 FDD2512 
厂家: FAIRCHILD SEMICONDUCTOR
描述: MOSFET N-CH 150V 6.7A D-PAK
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详细技术参数
VendorFairchild Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameDPak
Package NameTO-252
Package Name* DPak, 2-lead + Tab
FET TypeN-Channel
Drain to Source Voltage (Vdss)150.0 V [Nom]
Voltage Gate to Source (Vgs)20.0 V [Max]
Continuous Drain Current (Id)6.70 A [Nom]
Input Capacitance (Ciss)344.0 pF @ 75.0 V
Gate Charge (Qg)8.00 nC @ 10.0 V
Power Dissipation42.000 W [Max]
PackagingTape & Reel, 13"
Protection Diode(s)Drain to Source
Delay Time On6.50 ns [Typ]
Delay Time Off22.00 ns [Typ]
Rise Time3.50 ns [Typ]
Fall Time4.000 ns [Typ]
Vgs Min.2.00 V @ 250.0 Lead Free Status
RoHS StatusRoHS Compliant
 
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