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型号 FDN352AP 
厂家: FAIRCHILD SEMICONDUCTOR
描述: MOSFET P-CH 30V 1.3A SSOT-3
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详细技术参数
VendorFairchild Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameSuperSOT?-3
FET TypeP-Channel
Drain to Source Voltage (Vdss)30.0 V [Nom]
Voltage Gate to Source (Vgs)25.0 V [Max]
Continuous Drain Current (Id)1.30 A [Nom]
Input Capacitance (Ciss)150.0 pF @ 15.0 V
Gate Charge (Qg)1.40 nC @ 4.5 V
Power Dissipation500.000 mW [Max]
PackagingTape & Reel, 7"
Protection Diode(s)Drain to Source
Delay Time On4.00 ns [Typ]
Delay Time Off10.00 ns [Typ]
Rise Time15.00 ns [Typ]
Fall Time1.000 ns [Typ]
Vgs Min.800.00 mV @ 250.0 ?A
Vgs Max.2.50 V @ 250.0 ?A
Drain Peak Current (Idm)10.00 A [Nom]
Operating Junction Temperature-55 °C [Min]
Operating Junction Temperature150 °C [Max]
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
 
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