| Vendor | Fairchild Semiconductor |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-220 |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 30.0 V [Max] |
| Continuous Drain Current (Id) | 12.00 A [Nom] |
| Rds On (Max) @ Id, Vgs | 650 mOhms @ 6A, 10V |
| Rds On (Typ) @ Id, Vgs | 550 mOhms @ 6A, 10V |
| Input Capacitance (Ciss) | 2290.0 pF @ 25.0 V |
| Gate Charge (Qg) | 63.00 nC @ 10.0 V |
| Power Dissipation | 225.000 W [Max] |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
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| FQP12N60C 供应商 |
FQP12N60C Datasheet |
FQP12N60C 技术参数 |
FQP12N60C 替代型号 |
| FQP12N60C 代理商 |
FQP12N60C 现货 |
FQP12N60C 电路图 |
FQP12N60C 规格书 |
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