| Vendor | Fairchild Semiconductor |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | IPak |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 30.0 V [Max] |
| Continuous Drain Current (Id) | 2.00 A [Nom] |
| Rds On (Max) @ Id, Vgs | 4.7 Ohms @ 1A, 10V |
| Rds On (Typ) @ Id, Vgs | 3.7 Ohms @ 1A, 10V |
| Input Capacitance (Ciss) | 350.0 pF @ 25.0 V |
| Gate Charge (Qg) | 11.00 nC @ 10.0 V |
| Power Dissipation | 45.000 W [Max] |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
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| FQU2N60TU 供应商 |
FQU2N60TU Datasheet |
FQU2N60TU 技术参数 |
FQU2N60TU 替代型号 |
| FQU2N60TU 代理商 |
FQU2N60TU 现货 |
FQU2N60TU 电路图 |
FQU2N60TU 规格书 |
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