| Vendor | Fairchild Semiconductor |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Surface (SMD, SMT) |
| Package Name | SuperSOT?-6 |
| FET Type | Dual P-Channel |
| Drain to Source Voltage (Vdss) | 20.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 12.0 V [Max] |
| Continuous Drain Current (Id) | 2.20 A [Nom] |
| Input Capacitance (Ciss) | 337.0 pF @ 10.0 V |
| Gate Charge (Qg) | 3.70 nC @ 4.5 V |
| Power Dissipation | 960.000 mW [Max] |
| Packaging | Tape & Reel, 7" |
| Protection Diode(s) | Drain to Source |
| Delay Time On | 9.00 ns [Typ] |
| Delay Time Off | 10.00 ns [Typ] |
| Rise Time | 12.00 ns [Typ] |
| Fall Time | 5.000 ns [Typ] |
| Vgs Min. | 600.00 mV @ 250.0 ?A |
| Vgs Max. | 1.50 V @ 250.0 ?A |
| Drain Peak Current (Idm) | 6.00 A [Nom] |
| Operating Junction Temperature | -55 °C [Min] |
| Operating Junction Temperature | 150 °C [Max] |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
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| FDC6310P 供应商 |
FDC6310P Datasheet |
FDC6310P 技术参数 |
FDC6310P 替代型号 |
| FDC6310P 代理商 |
FDC6310P 现货 |
FDC6310P 电路图 |
FDC6310P 规格书 |
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