| Vendor | ON Semiconductor |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-220AB |
| Transistor Type | NPN |
| Collector Emitter Voltage (Vceo) | 400.0 V [Max] |
| Emitter Base Voltage (Vebo) | 9.0 V [Max] |
| Collector Current (Ic) | 12.00 A [Max] |
| Minimum DC Current Gain (hFE) @ Ic, Vce | 6 @ 8A, 5V |
| Saturation Voltage (Vce) @ Ib, Ic | 1V @ 1A, 5A |
| Saturation Voltage (Vbe) @ Ib, Ic | 1.2V @ 1A, 5A |
| Transition Frequency | 4.0 MHz [Nom] |
| Power Dissipation | 100.000 W [Max] |
| Packaging | Bulk |
| Collector Peak Current (Icm) | 24.000 A [Nom] |
| Operating Junction Temperature | -65 °C [Min] |
| Operating Junction Temperature | 150 °C [Max] |
| Operating Temperature | -65 °C [Min] |
| Operating Temperature | 150 °C [Max] |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
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| MJE13009 供应商 |
MJE13009 Datasheet |
MJE13009 技术参数 |
MJE13009 替代型号 |
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