| Vendor | ON Semiconductor |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Surface (SMD, SMT) |
| Package Name | DPak |
| Package Name | * DPak, 2-lead + Tab |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 200.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 20.0 V [Max] |
| Continuous Drain Current (Id) | 6.00 A [Nom] |
| Rds On (Max) @ Id, Vgs | 700 mOhms @ 3A, 10V |
| Rds On (Typ) @ Id, Vgs | 460 mOhms @ 3A, 10V |
| Input Capacitance (Ciss) | 480.0 pF @ 25.0 V |
| Gate Charge (Qg) | 21.00 nC @ 10.0 V |
| Power Dissipation | 50.000 W [Max] |
| Protection Diode(s) | Drain to Source |
| Rise Time | 58.00 ns [Max] |
| Rise Time | 29.00 ns [Typ] |
| Fall Time | 40.800 ns [Max] |
| Fall Time | 20.000 ns [Typ] |
| Vgs Min. | 2.00 V @ 250.0 ?A |
| Vgs Max. | 4.00 V @ 250.0 ?A |
| Drain Peak Current (Idm) | 18.00 A [Nom] |
| Operating Junction Temperature | -55 °C [Min] |
| Operating Junction Temperature | 150 °C [Max] |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
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| MTD6N20ET4G 供应商 |
MTD6N20ET4G Datasheet |
MTD6N20ET4G 技术参数 |
MTD6N20ET4G 替代型号 |
| MTD6N20ET4G 代理商 |
MTD6N20ET4G 现货 |
MTD6N20ET4G 电路图 |
MTD6N20ET4G 规格书 |
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