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型号 MTD6N20ET4 
厂家: ON SEMICONDUCTOR
描述: MOSFET N-CH 200V 6A DPAK
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详细技术参数
VendorON Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameDPak
Package Name* DPak, 2-lead + Tab
FET TypeN-Channel
Drain to Source Voltage (Vdss)200.0 V [Nom]
Voltage Gate to Source (Vgs)20.0 V [Max]
Continuous Drain Current (Id)6.00 A [Nom]
Power Dissipation50.000 W [Max]
PackagingDigi-Reel
Protection Diode(s)Drain to Source
Rise Time58.00 ns [Max]
Rise Time29.00 ns [Typ]
Fall Time40.800 ns [Max]
Fall Time20.000 ns [Typ]
Vgs Min.2.00 V @ 250.0 ?A
Vgs Max.4.00 V @ 250.0 ?A
Drain Peak Current (Idm)18.00 A [Nom]
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
 
MTD6N20ET4 供应商 MTD6N20ET4 Datasheet MTD6N20ET4 技术参数 MTD6N20ET4 替代型号
MTD6N20ET4 代理商 MTD6N20ET4 现货 MTD6N20ET4 电路图 MTD6N20ET4 规格书
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