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型号 MTD6P10E 
厂家: ON SEMICONDUCTOR
描述: MOSFET P-CH 100V 6A DPAK
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详细技术参数
VendorON Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameDPak
Package Name* DPak, 2-lead + Tab
FET TypeP-Channel
Drain to Source Voltage (Vdss)100.0 V [Nom]
Voltage Gate to Source (Vgs)15.0 V [Max]
Continuous Drain Current (Id)6.00 A [Nom]
Power Dissipation50.000 W [Max]
PackagingBulk
Protection Diode(s)Drain to Source
Rise Time60.000 ns [Max]
Rise Time29.000 ns [Typ]
Fall Time20.000 ns [Max]
Fall Time9.000 ns [Typ]
Vgs Min.2.00 V @ 250.0 ?A
Vgs Max.4.00 V @ 250.0 ?A
Drain Peak Current (Idm)18.000 A [Nom]
Operating Junction Temperature-55 °C [Min]
Operating Junction Temperature150 °C [Max]
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
 
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