| Vendor | ON Semiconductor |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-218 |
| Transistor Type | NPN Darlington |
| Collector Emitter Voltage (Vceo) | 100.0 V [Max] |
| Collector Base Voltage (Vcbo) | 100.0 V [Max] |
| Emitter Base Voltage (Vebo) | 5.0 V [Max] |
| Collector Current (Ic) | 10.00 A [Max] |
| Minimum DC Current Gain (hFE) @ Ic, Vce | 1000 @ 5A, 4V |
| Saturation Voltage (Vce) @ Ib, Ic | 2V @ 20mA, 5A |
| Power Dissipation | 125.000 W [Max] |
| Packaging | Tube |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
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| BDV65B 供应商 |
BDV65B Datasheet |
BDV65B 技术参数 |
BDV65B 替代型号 |
| BDV65B 代理商 |
BDV65B 现货 |
BDV65B 电路图 |
BDV65B 规格书 |
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