| Vendor | Panasonic Semiconductor |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | MT-4 |
| Transistor Type | PNP |
| Collector Emitter Voltage (Vceo) | 60.0 V [Max] |
| Collector Base Voltage (Vcbo) | 60.0 V [Max] |
| Emitter Base Voltage (Vebo) | 6.0 V [Max] |
| Collector Current (Ic) | 3.00 A [Max] |
| Minimum DC Current Gain (hFE) @ Ic, Vce | 160 @ 1A, 4V |
| Saturation Voltage (Vce) @ Ib, Ic | 800mV @ 375mA, 3A |
| Transition Frequency | 90.0 MHz [Nom] |
| Power Dissipation | 2.000 W [Max] |
| Packaging | Tape & Box (Ammo Pack) |
| Collector Peak Current (Icm) | 6.000 A [Nom] |
| Operating Junction Temperature | 150 °C [Max] |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
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| 2SA20670PA 供应商 |
2SA20670PA Datasheet |
2SA20670PA 技术参数 |
2SA20670PA 替代型号 |
| 2SA20670PA 代理商 |
2SA20670PA 现货 |
2SA20670PA 电路图 |
2SA20670PA 规格书 |
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