| Vendor | Panasonic Semiconductor |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Surface (SMD, SMT) |
| Package Name | NS-B1 |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 200.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 20.0 V [Max] |
| Continuous Drain Current (Id) | 2.00 A [Nom] |
| Input Capacitance (Ciss) | 400.0 pF @ 20.0 V |
| Power Dissipation | 1.000 W [Max] |
| Packaging | Tape & Reel |
| Protection Diode(s) | Drain to Source |
| Delay Time On | 12.00 ns [Typ] |
| Delay Time Off | 50.00 ns [Typ] |
| Rise Time | 15.00 ns [Max] |
| Fall Time | 25.000 ns [Typ] |
| Vgs Min. | 2.00 V @ 1.0 mA |
| Vgs Max. | 4.00 V @ 1.0 mA |
| Drain Peak Current (Idm) | 4.00 A [Nom] |
| Operating Junction Temperature | 150 °C [Max] |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
|
|
| |
| 2SJ058200L 供应商 |
2SJ058200L Datasheet |
2SJ058200L 技术参数 |
2SJ058200L 替代型号 |
| 2SJ058200L 代理商 |
2SJ058200L 现货 |
2SJ058200L 电路图 |
2SJ058200L 规格书 |
|
下载PDF Datasheet文档