| Vendor | Renesas Technology America |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-3P |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 160.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 15.0 V [Max] |
| Continuous Drain Current (Id) | 7.00 A [Nom] |
| Power Dissipation | 100.000 W [Max] |
| Packaging | Bulk |
| Protection Diode(s) | Drain to Source |
| Protection Diode(s) | Gate to Source |
| Delay Time On | 230.00 ns [Typ] |
| Delay Time Off | 110.00 ns [Typ] |
| Operating Junction Temperature | 150 °C [Max] |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
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| 2SJ162 供应商 |
2SJ162 Datasheet |
2SJ162 技术参数 |
2SJ162 替代型号 |
| 2SJ162 代理商 |
2SJ162 现货 |
2SJ162 电路图 |
2SJ162 规格书 |
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