| Vendor | Renesas Technology America |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-3P |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 160.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 15.0 V [Max] |
| Continuous Drain Current (Id) | 7.00 A [Nom] |
| Input Capacitance (Ciss) | 600.0 pF @ 10.0 V |
| Power Dissipation | 100.000 W [Max] |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
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| 2SK1058E 供应商 |
2SK1058E Datasheet |
2SK1058E 技术参数 |
2SK1058E 替代型号 |
| 2SK1058E 代理商 |
2SK1058E 现货 |
2SK1058E 电路图 |
2SK1058E 规格书 |
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