| Vendor | SGI/Vishay |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-220AB |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 100.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 20.0 V [Max] |
| Continuous Drain Current (Id) | 3.00 A [Nom] |
| Power Dissipation | 43.000 W [Max] |
| Packaging | Bulk |
| Protection Diode(s) | Drain to Source |
| Rise Time | 27.00 ns [Typ] |
| Fall Time | 17.000 ns [Typ] |
| Vgs Min. | 2.00 V @ 250.0 ?A |
| Vgs Max. | 4.00 V @ 250.0 ?A |
| Drain Peak Current (Idm) | 12.00 A [Nom] |
| Operating Junction Temperature | -55 °C [Min] |
| Operating Junction Temperature | 175 °C [Max] |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
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| IRF9510 供应商 |
IRF9510 Datasheet |
IRF9510 技术参数 |
IRF9510 替代型号 |
| IRF9510 代理商 |
IRF9510 现货 |
IRF9510 电路图 |
IRF9510 规格书 |
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