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型号 STD1HNC60T4 
厂家: STMICROELECTRONICS
描述: MOSFET N-CH 600V 2A DPAK
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详细技术参数
VendorSTMicroelectronics
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameDPak
Package NameTO-252
Package Name* DPak, 2-lead + Tab
FET TypeN-Channel
Drain to Source Voltage (Vdss)600.0 V [Nom]
Voltage Gate to Source (Vgs)30.0 V [Max]
Continuous Drain Current (Id)2.00 A [Nom]
Power Dissipation50.000 W [Max]
PackagingTape & Reel
Protection Diode(s)Drain to Source
Rise Time8.50 ns [Typ]
Fall Time9.000 ns [Typ]
Vgs Min.2.00 V @ 250.0 ?A
Vgs Max.4.00 V @ 250.0 ?A
Drain Peak Current (Idm)8.00 A [Nom]
Operating Junction Temperature150 °C [Max]
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
 
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STD1HNC60T4 代理商 STD1HNC60T4 现货 STD1HNC60T4 电路图 STD1HNC60T4 规格书
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