| Vendor | STMicroelectronics |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-220 |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 30.0 V [Max] |
| Continuous Drain Current (Id) | 11.00 A [Nom] |
| Power Dissipation | 160.000 W [Max] |
| Packaging | Tube |
| Protection Diode(s) | Drain to Source |
| Rise Time | 20.00 ns [Typ] |
| Fall Time | 11.000 ns [Typ] |
| Vgs Min. | 3.00 V @ 250.0 ?A |
| Vgs Max. | 5.00 V @ 250.0 ?A |
| Drain Peak Current (Idm) | 44.00 A [Nom] |
| Operating Junction Temperature | 150 °C [Max] |
| Lead Free Status | Request Inventory Verification |
| RoHS Status | Request Inventory Verification |
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| STP11NM60 供应商 |
STP11NM60 Datasheet |
STP11NM60 技术参数 |
STP11NM60 替代型号 |
| STP11NM60 代理商 |
STP11NM60 现货 |
STP11NM60 电路图 |
STP11NM60 规格书 |
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