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型号 STP11NM60FP 
厂家: STMICROELECTRONICS
描述: MOSFET N-CH 650V 11A TO220FP
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详细技术参数
VendorSTMicroelectronics
CategoryTransistors, FETs, IGBTs
Mounting TypeThrough Hole
Package NameTO-220 FullPAK
FET TypeN-Channel
Drain to Source Voltage (Vdss)650.0 V [Nom]
Voltage Gate to Source (Vgs)30.0 V [Max]
Continuous Drain Current (Id)11.00 A [Nom]
Power Dissipation35.000 W [Max]
PackagingTube
Protection Diode(s)Drain to Source
Rise Time20.00 ns [Typ]
Fall Time11.000 ns [Typ]
Vgs Min.3.00 V @ 250.0 ?A
Vgs Max.5.00 V @ 250.0 ?A
Drain Peak Current (Idm)44.00 A [Nom]
Operating Junction Temperature150 °C [Max]
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
 
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