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型号 STD1NK80ZT4 
厂家: STMICROELECTRONICS
描述: MOSFET N-CHAN 800V 1A DPAK
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详细技术参数
VendorSTMicroelectronics
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameDPak
Package NameTO-252
Package Name* DPak, 2-lead + Tab
FET TypeN-Channel
Drain to Source Voltage (Vdss)800.0 V [Nom]
Voltage Gate to Source (Vgs)30.0 V [Max]
Continuous Drain Current (Id)1.00 A [Nom]
Input Capacitance (Ciss)160.0 pF @ 25.0 V
Gate Charge (Qg)7.70 nC @ 10.0 V
Power Dissipation45.000 W [Max]
PackagingTape & Reel
Protection Diode(s)Drain to Source
Protection Diode(s)Gate to Source
Delay Time On8.00 ns [Typ]
Delay Time Off22.00 ns [Typ]
Rise Time30.00 ns [Typ]
Fall Time55.000 ns [Typ]
Vgs Min.3.00 V @ 50.0 ?A
Vgs Max.4.50 V @ 50.0 ?A
Drain Peak Current (Idm)5.00 A [Nom]
Operating Junction Temperature-55 °C [Min]
Operating Junction Temperature150 °C [Max]
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
 
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