| Vendor | STMicroelectronics |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-220 |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 500.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 25.0 V [Max] |
| Continuous Drain Current (Id) | 11.00 A [Nom] |
| Input Capacitance (Ciss) | 880.0 pF @ 25.0 V |
| Gate Charge (Qg) | 30.00 nC @ 10.0 V |
| Power Dissipation | 100.000 W [Max] |
| Packaging | Tube |
| Protection Diode(s) | Drain to Source |
| Delay Time On | 15.00 ns [Typ] |
| Delay Time Off | 60.00 ns [Typ] |
| Rise Time | 15.00 ns [Typ] |
| Fall Time | 14.000 ns [Typ] |
| Vgs Min. | 2.00 V @ 250.0 ?A |
| Vgs Max. | 4.00 V @ 250.0 ?A |
| Drain Peak Current (Idm) | 44.00 A [Nom] |
| Operating Junction Temperature | -55 °C [Min] |
| Operating Junction Temperature | 150 °C [Max] |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
|
|
| |
| STP12NM50N 供应商 |
STP12NM50N Datasheet |
STP12NM50N 技术参数 |
STP12NM50N 替代型号 |
| STP12NM50N 代理商 |
STP12NM50N 现货 |
STP12NM50N 电路图 |
STP12NM50N 规格书 |
|
下载PDF Datasheet文档