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	Ðͺţº	STP11NM60FDFP
	³§¼Ò£º	STMICROELECTRONICS
	ÃèÊö£º	MOSFET N-CHAN 600V 11A TO-220FP
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Vendor STMicroelectronics Category Transistors, FETs, IGBTs Mounting Type Through Hole Package Name TO-220 FullPAK FET Type N-Channel Drain to Source Voltage (Vdss) 600.0 V [Nom] Voltage Gate to Source (Vgs) 30.0 V [Max] Continuous Drain Current (Id) 11.00 A [Nom] Rds On (Max) @ Id, Vgs 450 mOhms @ 5.5A, 10V Rds On (Typ) @ Id, Vgs 400 mOhms @ 5.5A, 10V Input Capacitance (Ciss) 900.0 pF @ 25.0 V Gate Charge (Qg) 40.00 nC @ 10.0 V Power Dissipation 160.000 W [Max] Packaging Tube Delay Time On 20.00 ns [Typ] Rise Time 16.00 ns [Typ] Fall Time 15.000 ns [Typ] Vgs Max. 30.00 V @ 11.0 A Drain Peak Current (Idm) 44.00 A [Nom] Operating Junction Temperature 65 ¡ãC [Min] Operating Junction Temperature 150 ¡ãC [Max] Lead Free Status Lead Free RoHS Status RoHS Compliant   STP11NM60FDFP ¹©Ó¦ÉÌ STP11NM60FDFP Datasheet STP11NM60FDFP ¼¼Êõ²ÎÊý STP11NM60FDFP Ìæ´úÐͺŠSTP11NM60FDFP ´úÀíÉÌ STP11NM60FDFP ÏÖ»õ STP11NM60FDFP µç·ͼ STP11NM60FDFP ¹æ¸ñÊé

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