| Vendor | STMicroelectronics |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-220 |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 25.0 V [Max] |
| Continuous Drain Current (Id) | 10.00 A [Nom] |
| Rds On (Max) @ Id, Vgs | 450 mOhms @ 5A, 10V |
| Rds On (Typ) @ Id, Vgs | 370 mOhms @ 5A, 10V |
| Input Capacitance (Ciss) | 850.0 pF @ 50.0 V |
| Gate Charge (Qg) | 31.00 nC @ 10.0 V |
| Power Dissipation | 100.000 W [Max] |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
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| STP11NM60N 供应商 |
STP11NM60N Datasheet |
STP11NM60N 技术参数 |
STP11NM60N 替代型号 |
| STP11NM60N 代理商 |
STP11NM60N 现货 |
STP11NM60N 电路图 |
STP11NM60N 规格书 |
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