| Vendor | Toshiba |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-3P(L) |
| Transistor Type | PNP |
| Collector Emitter Voltage (Vceo) | 200.0 V [Max] |
| Collector Base Voltage (Vcbo) | 200.0 V [Max] |
| Emitter Base Voltage (Vebo) | 5.0 V [Max] |
| Collector Current (Ic) | 15.00 A [Max] |
| Minimum DC Current Gain (hFE) @ Ic, Vce | 80 @ 1A, 5V |
| Saturation Voltage (Vce) @ Ib, Ic | 3V @ 1A, 10A |
| Transition Frequency | 25.0 MHz [Nom] |
| Power Dissipation | 150.000 W [Max] |
| Packaging | Bulk |
| Operating Junction Temperature | 150 °C [Max] |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
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| 2SA1302O 供应商 |
2SA1302O Datasheet |
2SA1302O 技术参数 |
2SA1302O 替代型号 |
| 2SA1302O 代理商 |
2SA1302O 现货 |
2SA1302O 电路图 |
2SA1302O 规格书 |
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