| Vendor | Toshiba |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-3P(N) |
| Package Name | 2-16C1A |
| Transistor Type | PNP |
| Collector Emitter Voltage (Vceo) | 230.0 V [Max] |
| Collector Base Voltage (Vcbo) | 230.0 V [Max] |
| Emitter Base Voltage (Vebo) | 5.0 V [Max] |
| Collector Current (Ic) | 15.00 A [Max] |
| Minimum DC Current Gain (hFE) @ Ic, Vce | 80 @ 1A, 5V |
| Saturation Voltage (Vce) @ Ib, Ic | 3V @ 800mA, 8A |
| Transition Frequency | 30.0 MHz [Nom] |
| Power Dissipation | 130.000 W [Max] |
| Packaging | Bulk |
| Operating Junction Temperature | 150 °C [Max] |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
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| 2SA1962OQ 供应商 |
2SA1962OQ Datasheet |
2SA1962OQ 技术参数 |
2SA1962OQ 替代型号 |
| 2SA1962OQ 代理商 |
2SA1962OQ 现货 |
2SA1962OQ 电路图 |
2SA1962OQ 规格书 |
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