| Vendor | Toshiba |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-220SM |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 100.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 20.0 V [Max] |
| Continuous Drain Current (Id) | 16.00 A [Nom] |
| Rds On (Max) @ Id, Vgs | 320 mOhms @ 6A, 4V |
| Rds On (Typ) @ Id, Vgs | 250 mOhms @ 6A, 4V |
| Input Capacitance (Ciss) | 1100.0 pF @ 10.0 V |
| Gate Charge (Qg) | 48.00 nC @ 10.0 V |
| Power Dissipation | 60.000 W [Max] |
| Packaging | Tube |
| Rise Time | 18.00 ns [Typ] |
| Fall Time | 18.000 ns [Typ] |
| Vgs Max. | 20.00 V @ 16.0 A |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
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| 2SJ412SMQ 供应商 |
2SJ412SMQ Datasheet |
2SJ412SMQ 技术参数 |
2SJ412SMQ 替代型号 |
| 2SJ412SMQ 代理商 |
2SJ412SMQ 现货 |
2SJ412SMQ 电路图 |
2SJ412SMQ 规格书 |
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