| Vendor | Toshiba |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | 2-7B1B |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 20.0 V [Max] |
| Continuous Drain Current (Id) | 3.00 A [Nom] |
| Rds On (Max) @ Id, Vgs | 450 mOhms @ 2A, 4V |
| Rds On (Typ) @ Id, Vgs | 360 mOhms @ 2A, 4V |
| Input Capacitance (Ciss) | 280.0 pF @ 10.0 V |
| Gate Charge (Qg) | 13.50 nC @ 10.0 V |
| Power Dissipation | 20.000 W [Max] |
| Packaging | Tape & Reel |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
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| 2SK2201TE16L1NQ 供应商 |
2SK2201TE16L1NQ Datasheet |
2SK2201TE16L1NQ 技术参数 |
2SK2201TE16L1NQ 替代型号 |
| 2SK2201TE16L1NQ 代理商 |
2SK2201TE16L1NQ 现货 |
2SK2201TE16L1NQ 电路图 |
2SK2201TE16L1NQ 规格书 |
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