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	ÃèÊö£º	MOSFET N-CH 60V 5A 2-7J1B
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Vendor Toshiba Category Transistors, FETs, IGBTs Mounting Type Surface (SMD, SMT) Package Name 2-7J1B Package Name SC-64 FET Type N-Channel Drain to Source Voltage (Vdss) 60.0 V [Nom] Voltage Gate to Source (Vgs) 20.0 V [Max] Continuous Drain Current (Id) 5.00 A [Nom] Rds On (Max) @ Id, Vgs 30 mOhms @ 1.3A, 4V Rds On (Typ) @ Id, Vgs 20 mOhms @ 1.3A, 4V Input Capacitance (Ciss) 370.0 pF @ 10.0 V Gate Charge (Qg) 12.00 nC @ 10.0 V Power Dissipation 20.000 W [Max] Packaging Digi-Reel Rise Time 18.00 ns [Typ] Fall Time 55.000 ns [Typ] Lead Free Status Lead Free RoHS Status RoHS Compliant   2SK2231TE16R1NQ ¹©Ó¦ÉÌ 2SK2231TE16R1NQ Datasheet 2SK2231TE16R1NQ ¼¼Êõ²ÎÊý 2SK2231TE16R1NQ Ìæ´úÐͺŠ2SK2231TE16R1NQ ´úÀíÉÌ 2SK2231TE16R1NQ ÏÖ»õ 2SK2231TE16R1NQ µç·ͼ 2SK2231TE16R1NQ ¹æ¸ñÊé

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