| Vendor | Toshiba |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | 2-10R1B |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 20.0 V [Max] |
| Continuous Drain Current (Id) | 45.00 A [Nom] |
| Power Dissipation | 45.000 W [Max] |
| Packaging | Bulk |
| Protection Diode(s) | Drain to Source |
| Protection Diode(s) | Gate to Source |
| Rise Time | 25.00 ns [Typ] |
| Fall Time | 60.000 ns [Typ] |
| Vgs Min. | 800.00 mV @ 1.0 mA |
| Vgs Max. | 2.00 V @ 1.0 mA |
| Drain Peak Current (Idm) | 180.00 A [Nom] |
| Operating Junction Temperature | 150 °C [Max] |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
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| 2SK2312 供应商 |
2SK2312 Datasheet |
2SK2312 技术参数 |
2SK2312 替代型号 |
| 2SK2312 代理商 |
2SK2312 现货 |
2SK2312 电路图 |
2SK2312 规格书 |
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