| Vendor | Toshiba |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-220FL |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 20.0 V [Max] |
| Continuous Drain Current (Id) | 45.00 A [Nom] |
| Power Dissipation | 65.000 W [Max] |
| Packaging | Bulk |
| Protection Diode(s) | Drain to Source |
| Protection Diode(s) | Gate to Source |
| Rise Time | 12.000 ns [Typ] |
| Fall Time | 75.000 ns [Typ] |
| Vgs Min. | 1.50 V @ 1.0 mA |
| Vgs Max. | 3.00 V @ 1.0 mA |
| Drain Peak Current (Idm) | 135.000 A [Nom] |
| Operating Junction Temperature | 150 °C [Max] |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
|
|
| |
| 2SK3127TE24L 供应商 |
2SK3127TE24L Datasheet |
2SK3127TE24L 技术参数 |
2SK3127TE24L 替代型号 |
| 2SK3127TE24L 代理商 |
2SK3127TE24L 现货 |
2SK3127TE24L 电路图 |
2SK3127TE24L 规格书 |
|
下载PDF Datasheet文档