| Vendor | Toshiba |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-220SIS |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 30.0 V [Max] |
| Continuous Drain Current (Id) | 10.00 A [Nom] |
| Power Dissipation | 45.000 W [Max] |
| Packaging | Bulk |
| Protection Diode(s) | Drain to Source |
| Protection Diode(s) | Gate to Source |
| Rise Time | 22.000 ns [Typ] |
| Fall Time | 36.000 ns [Typ] |
| Vgs Min. | 2.00 V @ 1.0 mA |
| Vgs Max. | 4.00 V @ 1.0 mA |
| Drain Peak Current (Idm) | 40.000 A [Nom] |
| Operating Junction Temperature | 150 °C [Max] |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
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| 2SK3569 供应商 |
2SK3569 Datasheet |
2SK3569 技术参数 |
2SK3569 替代型号 |
| 2SK3569 代理商 |
2SK3569 现货 |
2SK3569 电路图 |
2SK3569 规格书 |
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