| Vendor | Toshiba |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-3P |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 200.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 20.0 V [Max] |
| Continuous Drain Current (Id) | 12.00 A [Nom] |
| Input Capacitance (Ciss) | 1500.0 pF @ 30.0 V |
| Power Dissipation | 150.000 W [Max] |
| Packaging | Bulk |
|
|
| |
| 2SJ201YF 供应商 |
2SJ201YF Datasheet |
2SJ201YF 技术参数 |
2SJ201YF 替代型号 |
| 2SJ201YF 代理商 |
2SJ201YF 现货 |
2SJ201YF 电路图 |
2SJ201YF 规格书 |
|